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中文摘要：
在纳米印章技术中，为克服电子束刻蚀制备50nm以下线条的技术难点，利用等离子增强化学气相沉积技术制备了a-Si／SiN，多层膜，再利用选择性湿法腐蚀或干法腐蚀在横截面上制备出浮雕型一维纳米级模板．多层膜子层之间界面清晰陡峭，可以在纳米量级对子层厚度进行控制，得到了侧壁在纳米尺度上平滑的模板。通过控制多层膜子层的生长时间，制备出线条宽度和槽状宽度均为20nm的等间距模板，品质优于电子束刻蚀技术制备的模板。
英文摘要：
To overcome the difficulties in the fabrication of the nanoimprint mold with linewidth smaller than 50 nm, we deposited a-Si/SiN~ multilayer films in plasma enhanced chemical vapor deposition system and then prepared the relieo-nanomold on the cleaved section of the multilayer films by selectively etching or reactive ion etching process. Due to the slow deposition rate, the thickness of the sublayer, and therefore the size of the strips and grooves can be controlled on the nanometer scale by altering deposition time. The smallest width we get by now is the 20 nm strips and 20 nm pitches, which is better than that fabricated by electron beam lithography.
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