中文摘要：

以高纯（6N）Cd、Ge和As单质为原料，按CdGeAs2的化学计量比配料，采用机械振荡和温度振荡相结合新方法合成出CdGeAs2多晶锭，经X射线粉末衍射分析表明合成产物为高纯单相的CdGeAs2多晶．用20℃／min的升温和降温速率对合成的CdGeAs2多晶进行了DTA分析，结果显示CdGeAs2多晶的熔化温度为669．24℃、结晶温度为615．55℃．根据DTA分析结果设计CdGeAs2晶体生长温场，采用改进的Bridgman法生长出外观完整、尺寸为①15mm×45mm的CdGeAs2晶体，并对其进行解理实验，获得了完整、光滑的解理面，经XRD分析结果显示，连扫谱呈现{101）面的四级衍射峰，（101）面回摆谱峰尖锐、对称性好．

英文摘要：

Using high pure （6N） elements of cadmium （Cd）, germanium （Ga） and arsenic （As） as the raw material, in the chemistry ratio of CdGeAs2, a CdGeAs2 polycrystalline ingot with high mass density was synthesized by mechanical and temperature oscillation method. The X-ray diffraction （XRD） on the ingot showed that the ingot is high pure and single phase CdGeAs2 polycrystalline. The melting and crystallizing temperatures of CdGeAs2 polycrystalline from DTA curve at heating and cooling rates of 20℃/min were 669.24℃ and 615.55℃ respectively. On the basis of datum from the DTA, a temperature field of the CdGeAs2 crystal growth was designed. A good integrity CdGeAs2 single crystal with size of Φ15 mm×45 mm was grown by themodified Bridgman method. The cleavage test on the crystal was carried out by a single edge blade. An integral smooth cleavage face was obtained. It is found from the result of XRD analysis that the cleavage face is the face of （101）, the four-order diffraction peaks of the {101} faces are appeared and the rocking spectrum peak of the （lO1）face shows itself sharp and good symmetry.