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中文摘要：
采用单室等离子体化学气相沉积技术沉积pin微晶硅电池时,硼污染降低了本征材料的晶化率并影响了p/i界面特性.针对该问题文中采用p种子层技术,即在沉积p层后采取高的H2/SiH4比率及适当的功率又沉积一个薄的p层,初步研究了p种子层对微晶硅i层纵向均匀性及电池性能的影响.实验结果表明：采用此方法能改善p/i界面特性,提高本征材料纵向结构的均匀性并降低硼对本征层的污染,有效地提高单结微晶硅电池的性能.最后,通过优化沉积条件,制备得到光电转换效率为8.81%（1cm2）的非晶/微晶硅叠层电池.
英文摘要：
The p-i-n type μc-Si：H solar cells were prepared in a single chamber using very high frequency plasma enhanced chemical vapor deposition technique.Boron cross-contamination between p-layer and subsequent i-layer seriously affects the device performance.The effects of p-seeding on the μc-Si：H i-layers and performance of μc-Si：H solar cells were investigated.The p-seeding method was mainly realized by relatively high hydrogen rich plasma.It has been demonstrated that p-seeding can improve the characteristics of p/i interface and the vertical uniformity of the intrinsic layer and reduce boron contamination. Through the optimization of p-seeding layer technique, a-Si： H/μc-Si： H tandem solar cell with 8.81% （1 cm2） conversion efficiency has been fabricated in single chamber.
同期刊论文项目
同项目期刊论文
Influence of front electrode and back reflector electrode on the performances of microcrystalline si
Study of space voltage distribution between large-area parallel-plate electrodes for very high frequ
Study on the optical and electrical properties of plasma for the deposition of microcrystalline sili
Study of one-dimensional spatial distribution of the plasma luminous radicals during depositing sili
Modeling and experiments of high-pressure VHFSiH4/H-2 discharges for higher microcrystalline silicon
Influence of low rate p/i interface layer on the performance of high growth rate microcrystalline si
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