中文摘要：

基于求解二维Poisson方程，分析了具有埋氧层界面电荷的SOI结构纵向击穿特性，提出了界面电荷耐压模型。该模型通过埋氧层界面电荷来调制硅层和埋氧层电场．获得极高击穿电压。进一步提出临界界面电荷面密度概念，给出其工程化应用的近似公式。并对文献中的不同结构SOI器件的纵向耐压进行计算。解析结果和试验结果或MEDICI仿真结果吻合良好。

英文摘要：

By solving the Poisson equation, a new breakdown model based on interface charges is developed in the paper. When interface charges are introduced on the upper surface of buried oxide, the profiles of electric field in buried oxide increases greatly due to the continuity of electric displacement and an ideal vertical breakdown voltage is exhibited. Furthermore, a concept of critic density of interface charges is proposed and an approximate formula for engineering application is given. Analytical results are shown in good agreement with numerical analysis and reported experimental data.