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中文摘要：
用脉冲激光沉积法制备了非金属Te掺杂的钙钛矿锰氧化物La0．82Te0．18MnO3单晶薄膜．该薄膜从83K升温至373K过程中发生金属-绝缘体相变，转变点温度为283K．其电阻率在T〈TMI时符合电子-电子、电子-磁振子散射公式；在T〉TMI时为小极化子输运．薄膜在低温段连续激光（波长为532nm，40mW）作用下电阻率显著增大，电阻变化率在253K达到最大值51．1％，该变化率远大于相同条件下的空穴掺杂材料；在高温段产生了较小的光电导，电阻变化率小于10％．这些现象主要与激光激励下自旋系统和小极化子的变化有关．La0．82Te0．18MnO3薄膜在激光诱导下具有明显的与自旋相关的弛豫现象．激光开始作用时薄膜电阻率随时间的变化符合指数关系．
英文摘要：
The transition from the metallic phase to the nonconductive phase occurred at 283 K in La0.82Te0.18MnO3 thin film prepared by pulse laser deposition method. The transport results show that the data satisfy the formula of electro-electro and electro-magnon scattering for T 〈 TMt ; when T 〉 TMI it agrees with small polaron transport model. The effect of the continuous wave laser（532 nm,40 mW） on the film was also investigated, Below TMI, the resistivity has a photo-induced increase. The maximum rate of resistivity changes（△p/po） can reach 51.1%, which is much greater than that of hole-doped manganites. Above TMI then is a photoconduction. The relaxation was observed in the experiment when the laser was turned on and off. The resistively is exponentially related with the time.
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