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Distinction investigation of InGaAs photodetectors cutoff at 2.9 μ m
  • ISSN号：1350-4495
  • 期刊名称：Infrared Physics & Technology
  • 时间：0
  • 页码：124-128
  • 语言：英文
  • 相关项目：采用非矩形量子阱的磷化铟基波长扩展激光器
作者： Cheng Li, Yonggang Zhang, Kei Wang，Yi Gu, Hsby. Li|
同期刊论文项目
采用非矩形量子阱的磷化铟基波长扩展激光器
期刊论文 15 专利 4
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Structural and photoluminescence properties of highly strain-compensated InAlAs/InGaAs superlattice
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InP-based InGaAs/InA1GaAs digital alloy quantum well laser structure at 2μm
晶格失配度达2.6%的波长扩展InGaAs/InP光电探测器结构
异质界面数字梯度超晶格对扩展波长InGaAs光电探测器性能的改善