中文摘要：

提出了一种新型的低功耗亚阈值型CMOS带隙基准电压电路.该电路在不增加工作电源电压的情况下具有低功耗、低温度系数和高可靠性的优越性能,采用TSMC 0.18μm工艺仿真实现.该设计电路由MOS管、双极型晶体管和电阻组成,并且所有MOS管均工作在亚阈值状态,从而实现了较低的功耗.该带隙基准电压源的工作电压为1.1V,输出电压0.59V,消耗功耗约为68nW,在0.8~3V电压下均能稳定工作.在电源电压为1.1V和-40~80℃的工作温度下,电压基准的温度系数为14.8×10-6/℃,具有优良的温度稳定性.

英文摘要：

This paper proposes a low-power bandgap voltage reference base on subthreshold CMOS. This circuit has superior performance such as low-power, low-temperature coefficient and reliability while the supply voltage hold the line. The simulation based on the 0. 18 μm-CMOS process of TSMC. The design consists of MOSFETs, the bipolar transistor and resistors. All of MOSFETs work in subthreshold region, as a result, a low-power is achieved. The supply voltage of the voltage reference is 1.1 V, the output voltage is 0. 59 V , which can operate with a supply voltage ranging from 0. 8 V to 3 V and the power dissipation of Bandgap Voltage Reference is about 68 nW. When operating at a 1.1 V supply voltage within the temperature range from -40 ℃ to 80℃,the circuit has temperature coefficient of 14. 8 ×10-6℃ which has a better temperature stability.