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MOCVD生长Mn掺杂GaN薄膜的结构与磁学性能研究
  • ISSN号：1003-353X
  • 期刊名称：《半导体技术》
  • 时间：0
  • 分类：TN304.055[电子电信—物理电子学]
  • 作者机构：[1]南京大学物理系江苏省光电信息功能材料重点实验室
  • 相关基金：国家“973”重点基础研究项目(2006CB604905);国家“863”高技术研究发展计划(2006AA03Z411);国家自然科学基金(60721063,60731160628)
作者： 崔旭高[1], 张荣[1], 陶志阔[1], 李鑫[1], 修向前[1], 谢自力[1], 郑有炓[1]
关键词： 锰掺杂氮化稼, 金属有机化学气相淀积, 磁性
中文摘要：

用MOCVD技术在[0001]取向的蓝宝石衬底上生长出Mn掺杂的GaN薄膜。测试结果表明,Mn掺杂浓度小于2.7%时没有第二相物质出现。Raman谱结果表明,由于Mn离子的介入,替换了Ga位的阳离子,从而使得A1(LO)模的振动峰向低频方向移动。ESR结果表明,二价的Mn离子替换了三价的Ga离子,尽管如此,薄膜还是仅仅表现出顺磁性。通过Brillouin函数拟合以及ESR结果综合考虑可得,Mn在GaN晶格中的存在状态是孤立的二价顺磁性离子。

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期刊信息
  • 《半导体技术》
  • 中国科技核心期刊
  • 主管单位:中国电子科技集团公司
  • 主办单位:中国电子科技集团公司第十三研究所
  • 主编：赵小玲
  • 地址：石家庄179信箱46分箱
  • 邮编：050051
  • 邮箱：informax@heinfo.net
  • 电话：0311-87091339
  • 国际标准刊号：ISSN：1003-353X
  • 国内统一刊号：ISSN：13-1109/TN
  • 邮发代号:18-65
  • 获奖情况:
  • 中文核心期刊,中国科技论文统计用刊
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  • 被引量:6070