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4H-SiC trench gate MOSFETs with field plate termination
  • ISSN号：1674-7321
  • 期刊名称：Science in China - Series E: Technological Science
  • 时间：2014.10
  • 页码：2044-2049
  • 相关项目：HfAlO/4H-SiC MOSFETs功率器件研究
作者： Song QingWen|Zhang YuMing|Zhang YiMen|Tang XiaoYan|
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HfAlO/4H-SiC MOSFETs功率器件研究
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