中文摘要：

对利用In含量为0．3的InGaN／GaN多量子阱制作的InGaN太阳电池的结构和光电性能进行了研究，该太阳电池的InGaN／GaN多量子阱结构在一定程度上减轻了InN和GaN相分离现象．研究结果显示，InGaN／GaN多量子阱结构的太阳电池，在单色光波长大于420nm的工作条件下的光电性能有明显的改善．利用InGaN／GaN多量子阱结构制作的InGaN太阳电池，其开路电压约为2.0V，填充因子约为60％，在波长420nm时，外量子效率为40％，但在波长450nm时，却只有10％．

英文摘要：

The structure and optoelectronic performance of InGaN solar cells are researched by preparing In -GaN/GaN multiple quantum wells with In contents exceeding 0.3 , attempting to alleviate to the phase separa-tion phenomenon of InN and GaN at a certain degree by this InGaN/GaN multiple quantum wells structure .The research result is that this InGaN/GaN multiple quantum wells solar cells have a better optoelectronic perform-ance at wavelengths longer than 420 nm.The prepared solar cells based on InGaN/GaN multiple quantum wells exhibit an open circuit voltage of about 2 V, fill factor of about 60%, and an external efficiency of about 40%at 420 nm, but only about 10%at 450 nm.