中文摘要：

一维SiC纳米材料由于具有独特的电学、光学及力学性能，在新型纳米光电子器件、生物医学传感器、储能和材料增韧等领域拥有广阔的应用前景。介绍了基于气相一液相一固相（VLS）、固相．液相一固相（SLS）、气相．固相（VS）和氧化物辅助生长的生长机制（OAG）制备一维SiC纳米材料的方法，并分析了各种方法的特点。一维SiC纳米材料的制备方法主要存在以下几个问题：（1）工艺过程中温度高（模板法、激光烧蚀法、电弧放电法、热蒸发法、碳热还原法）或压力大（溶剂热法），涉及过程复杂；（2）产物中常含有金属杂质（如金属气一液一固（VLS）催化生长法）或表面包覆SiO，层（激光烧蚀法、电弧放电法、碳热还原法），形貌不均一；（3）产量低（模板法、溶剂热法）。这些问题制约了高纯一维SiC纳米材料的制备及其本征性能的研究，也不利于实现一维SiC纳米材料的规模化生产。因此，发展新型低成本高纯一维SiC纳米材料的制备技术对于推动一维SiC纳米材料的研究、规模化生产以及在相关高科技领域中的应用具有十分重要的意义。

英文摘要：

One-dimensional silicon carbide nano-materials had potential applications in novel nano-scale photonic and electronic de- vices, biomedical sensors, energy storage and toughening due to their unique electrical, optical and mechanical properties. In this pa- per, several methods of preparing one-dimensional silicon carbide nano-materials based on vapour-liquid-solid （ VLS）, solid-liquid-sol- id （SLS）, vapour-solid （VS） and oxide-assisted-growth （OAG） growth mechanism were introduced. The characteristics for prepara- tion methods of one-dimensional SiC nano-materials were analyzed. These methods had disadvantages as follows ： （ 1 ） high temperature （template method, laser ablation synthesis, arc-discharge approach, heating and evaporation, and carbonthermal reduction） or high pressure （solvothermal method） with complicated process; （2） the products were contaminated by the metallic catalyst-assistant（ met- al-catalytic vapour-liquid-solid growth method） or covered with amorphous SiO2 （laser ablation synthesis, arc-discharge approach and carbonthermal reduction）, and had various morphologies（ carbonthermal reduction） ; （3） low yield （template method and solvothermal method）. These shortcomings not only restricted the research on intrinsic properties of high-purity one-dimensional silicon carbide nano-materials but also went against the scale-up production of one-dimensional silicon carbide nano-materials. The development of new preparation method for high-purity one-dimensional silicon carbide nano-materials with low cost was very important in research, scale- up production and application in high-tech field of one-dimensional silicon carbide nano-materials.