欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
研究了具有InGaN/GaN超晶格（SL）插入结构的绿光InGaN/GaN多量子阱（MQW）的发光特性。结构测试表明,SL插入结构并没有引起MQW中平均In组份的增加,而是改变了In组份的分布,形成了高In组份的量子点和低In组份量子阱。其电致发光（EL）谱和光致发光（PL）谱均出现了双发光峰。我们认为这两个峰分别来自于量子点和量子阱,且存在着载流子从阱向点转移的输运机制。最后变温PL积分强度的Arrhenius拟合表明,SL插入结构并没有在MQW中引入新的缺陷,使其发光效率下降。
英文摘要：
Green InGaN/GaN multiple quantum well（MQW） LEDs employing InGaN/GaN superlattice（SL） structure were studied.The distribution of indium within the MQWs is changed by inserting the InGaN/GaN SL.Meanwhile,the average indium content of MQW does not change.Two InGaN-related peaks that were clearly found in the electroluminescence（EL） and photoluminescence（PL） spectrum,which are assigned to In-rich quantum dots（QD） and the InGaN matrix,respectively.It is suggested that the carrier drifts from the InGaN matrix to the In-rich QD.It could be concluded that employing SL structures is an effective way to adjust the wavelength of InGaN/GaN MQW without introducing new defects in the MQWs.
同期刊论文项目
同项目期刊论文
The extrinsic and intrinsic causes for the electrical degradation of AlGaN/GaN high electron mobilit
Micro-Raman spectroscopy observation of field-induced strain relaxation in AlGaN/GaN/SiC heterojunct
Growth and characteristics of AlGaN/GaN HEMT structures with AlN/GaN superlattices as barrier layers
Threading dislocation density comparison between GaN grown on
the patterned and conventional sapphir
期刊信息
位置：