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n型GaN薄膜输运性质与发光研究
期刊名称:中国科学(G辑:物理学 力学 天文学)
时间:0
页码:1221-1227
语言:中文
相关项目:获得高质量低位错密度GaN衬底的生长新思路及相关关键问题研究
作者:
张荣|韩平|张曾|刘斌|修向前|江若琏|谢自力|施毅|顾书林|郑有炓|
同期刊论文项目
获得高质量低位错密度GaN衬底的生长新思路及相关关键问题研究
期刊论文 35
会议论文 8
专利 8
同项目期刊论文
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Carrier transport and luminescence properties of n-type GaN
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Impact of lattice strain on the phase formation, polarization and dielectric constant of PbZr1-xTixO
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Circular photogalvanic effect at inter-band excitation in InN
Al_xGa_(1-x)N/AlN超晶格材料特性研究
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Study of buffer and epitaxy technology in two-step growth of aluminium nitride
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m面GaN平面内结构和光学各向异性研究
Chemical mechanical polishing of freestanding GaN substrates
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