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Donor impurity states in direct-gap SiGe quantum well: Applied electric field and quantum size effec
  • ISSN号：0921-4526
  • 期刊名称：Physica B: Condensed Matter
  • 时间：0
  • 页码：4554-4557
  • 相关项目：GaN基量子结构的非线性光学性质
作者： Xia, Congxin|Jia, Yalei|Zhu, Yanping|Wei, Shuyi|
同期刊论文项目
GaN基量子结构的非线性光学性质
期刊论文 28
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