位置：成果数据库 > 期刊 > 期刊详情页
Aligned Zn-Zn2SiO4 core-shell
  • 时间：0
  • 相关项目：异质半导体纳米线阵列的结构与性质
作者： X. Feng (博士生), X. Yuan, T.
同期刊论文项目
异质半导体纳米线阵列的结构与性质
期刊论文 134 会议论文 76
同项目期刊论文
Polarization effect on p-type
Electronic structure of CaF2-t
Strain effects on Auger electr
金属-半导体超晶格中界面电荷的
Aligned Zn-Zn2SiO4 core-shell nanocables with homogenously intense ultraviolet emission at 300 nm
High-spatial-resolution strain measurements by Auger electron spectroscopy in epitaxial-lateral-over
Polarization effect on p-type doping efficiency in Mg- and Si-codoped wurtzite GaN from first-princi
Size and time dependences of the valence states of Sn ions in amphoteric tin oxide nanoparicles
Microwave plasma growth and high spatial resolution cathodoluminescent spectrum of tetrapod ZnO nano
Formation of GaAs hole above InAs quantum dots
Formation and STM tip-induced
Boundaries of 7×7 reconstruct
Formation of GaAs hole above I
Photoluminescence of bulk InP:
Layer structures under in-plan
Au/Au-Be与GaP欧姆接触的表面分
Microwave plasma growth and hi
Properties of ZnO Nanotetrapod
Size and time dependences of t
Electronic structures of subst
Heterostructure in ZnO nano-te
Electronic structures of substitutional C and O impurities in wurtzite GaN
Boundaries of 7×7 reconstruction domains on Si(111)
Layer structures under in-plane compressive strains in AlxGa1-xN/AlN interfaces
Formation and STM tip-induced reduction of ultra thin SnO film on Au(111)
Properties of ZnO Nanotetrapods
Deposition and characterization of GeCN thin films
Electronic structure of CaF2-type ZrO2 surface and bulk
金属-半导体超晶格中界面电荷的生成机制
Au/Au-Be与GaP欧姆接触的表面分析
纤锌矿结构ZnO中定位Ga-N共掺杂对p型掺杂效率的影响
具有新光学性质的Zn-Zn2SiO4纳米同轴线阵列
硅酸锌的电子结构
GaN半导体中InN量子点的结构性质
MgxZn1-xO结构性质
ZnO中Li相关缺陷结构性质
InGaN量子阱的微观特性
金属-半导体超晶格中的金属费米能级和半导体平均键能