中文摘要：

采用MOCVD技术在R面和C面蓝宝石上生长非极性A面和极性C面Al Ga N/Ga N异质结。分别用X射线衍射仪和原子力显微镜比较了两种材料的结构特性及表面形貌,通过电容-电压测试比较了两种材料的电学特性。研究结果表明,较高浓度的二维电子气的存在使得极性材料在微波功率器件方面更有优势,而非极性材料可以消除与极化相关的电场,更适合应用于光电器件领域。

英文摘要：

The non-polar A-plane and polar C-plane Al Ga N/Ga N heterojunctions were grown on R-plane and C-plane sapphires by MOCVD. The structure and surface morphology of the two materials were compared by X-ray diffractometer and atomic force microscopy. The electrical properties of the two materials were compared by capacitance-voltage measurements.The results showed that polar materials had more advantages in microwave power devices because of the higher concentration2 D electron gas. Nonpolar materials were more suitable for photovoltaic devices because they could eliminate polarizationrelated electric field.