中文摘要：

探讨了使用湿化学法对硅片表面进行活化，完成硅圆片低温直接键合的流程．通过对不同活化流程细节的分析，以及实际的实验结果，对不同的工艺流程的键合效果进行比较．提出采用浓HNO3进行表面活化的方法相对于采用H2SO4以及HF效果要好．其在Si片表面生成的多孔结构氧化层有利于键合．此外，混合了微量HF的活化液由于HF活性较大，配量不易控制，在实际实验室环境中并不实用．文中还给出了实际键合样片的红外图像以及拉伸曲线．

英文摘要：

The process of low temperature wafer direct bonding using wet chemical surface activation methods are discussed. After detail analysis of different activation procedure, the results are compared and given. The activation method treatment HNOa is found better than that using H2SO4 and HF. The oxide layer with porous structure is propitious to bonding. Besides, the solutions mixed with a little amount of HF are found not easy to prepare, thus not practical in normal lab environment due to the active character of the HF. The infrared images and tensile curves of the bonding samples are given.