中文摘要：

2X (FeNi/CoZnO )/ZnO/(CoZnO/Co ) X2 纺纱注射设备被劈啪作响和 photo-lithography.In 准备设备，二合成的磁性的层 2X (FeNi/CoZnO ) 并且(CoZnO/Co ) 有不同 coercivities 的 X2 被用来制作基于 ZnO 的半导体旋转阀门。因为 CoZnO 铁磁性的半导体层直接摸了 ZnO 空间层，从进 ZnO 的 CoZnO 的重要旋转注射被测量纺纱注射设备的磁致电阻观察。磁致电阻在房间温度在 90 K 与增加温度线性地归结，从 1.12% 为 0.35% 。

英文摘要：

2x （FeNi/CoZnO）/ZnO/（CoZnO/Co） x2 spin-inJection devices were prepared by sputtering and photo-lithography. In the devices, two composite magnetic layers 2x（FeNi/CoZnO） and （CoZnO/Co）x2 with different coercivities were used to fabricate the ZnO-based semiconductor spin valve. Since the CoZnO ferromagnetic semiconductor layers touched the ZnO space layer directly, the significant spin injection from CoZnO into ZnO was observed by measuring the magnetoresistance of the spin-injection devices. The magnetoresistance reduced linearly with increasing temperature, from 1.12% at 90 K to 0.35% at room temperature.