中文摘要：

利用真空热退火的方法，研究了单晶InP方形纳米孔阵列退火后的形貌和晶相等特征。发现随着退火温度的不断升高，单晶InP中P的挥发性也越来越剧烈，到650℃后P完全挥发，样品变成h单质，而单晶InP方形纳米孔阵列的形貌也逐渐变得不均一，当退火温度高于550℃，整个纳米孔阵列被完全破坏。

英文摘要：

We have studied the morphology and microstructure of the single crystalline InP nanopore array after vacuum thermal anneal. Along with the increase of annealing temperature, the atoms of P in single crystalline InP volatilize more quickly. When the annealing temperature raises to 650℃, the atoms of P in single crystalline InP have been totally volatilized, and the sample changes to In. Moreover, the morphology of the single crystalline InP nanopore array gradually becomes nonuniform and totally damaged when the annealing temperature is higher than 550℃.