采用射频磁控溅射法在Si(100)衬底上沉积了Ba0.65Sr0.35TiO3薄膜。借助XRD、AFM和SEM研究了衬底温度、退火温度、溅射气压等不同的溅射参数对Ba0.65Sr0.35TiO3薄膜的晶化行为和显微结构的影响。在室温下沉积并未经退火处理的Ba0.65Sr0.35TiO3薄膜是无定形态,在较高温度下沉积的薄膜晶化相对较好;随着在氧气气氛中退火温度的升高,X射线衍射峰的半峰宽变窄,衍射峰强度增强;在0.37~1.2Pa气压下沉积的Ba0.65Sr0.35TiO3薄膜有(110)和(200)主衍射峰,且其强度随溅射气压的增加而增强;当溅射气压继续升到3.9Pa,(110)和(200)衍射峰明显增强,说明Ba0.65Sro.35Ti03薄膜具有(110)+(200)择优取向。AFM和SEM结果显示薄膜晶粒细小均匀、结构致密、表面平整,且无裂纹、无孔洞。分析结果显示优化工艺参数制备的Ba0.65Sr0.35TiO3薄膜是用以制备非致冷红外探测器的优质材料。
Ba0.65Sr0.35TiO3 (BST) thin films on p-silicon substrates were deposited by radio frequency magnetron sputtering. The effects of the deposition parameters on the crystallization and microstructure of BST thin films were investigated by X-ray diffraction and filed emission electron microscopy, respectively. The crystallization behavior of these films was apparently affected by the substrate temperature, annealing temperature and sputtering pressure. The improved crystallization can be observed for BST thin films that deposited at higher temperature. The dominant X-ray diffraction peaks became sharper and more intense as the annealing temperature increased. BST thin films deposited at high sputtering pressure of 3.9Pa exhibited the (110)+(200) preferred orientation. Possible correlations of the crystallization with the sputtering pressure were discussed. The SEM and AFM morphologies indicated the film was small grains and smooth, and the interface between the film and the substrate was sharp and clear.