欢迎您!
东篱公司
退出
申报数据库
申报指南
立项数据库
成果数据库
期刊论文
会议论文
著 作
专 利
项目获奖数据库
位置:
成果数据库
>
期刊
> 期刊详情页
Anomalous Hall effect in epitaxial L1(0)-Mn1.5Ga films with variable chemical ordering
ISSN号:1098-0121
期刊名称:Physical Review B (Rapid Commun.)
时间:2014.6.18
页码:027203-
相关项目:基于超导量子干涉仪的磁学和电学性质同步测量系统研制
作者:
L. J. Zhu|D. Pan|J. H. Zhao,|
同期刊论文项目
基于超导量子干涉仪的磁学和电学性质同步测量系统研制
期刊论文 23
获奖 2
同项目期刊论文
Perpendicularly magnetized MnxGa films: promising materials for future spintronic devices, magnetic
Tailoring magnetism of multifunctional MnxGa films with giant perpendicular anisotropy
Ferromagnetic Interfacial Interaction and the Proximity Effect in a Co2FeAl/(Ga,Mn)As Bilayer
Perpendicularly magnetized tau-MnAl (001) thin films epitaxied on GaAs
Different temperature scaling of strain-induced magneto-crystalline anisotropy and Gilbert damping i
Note: Simultaneous measurements of magnetization and electrical transport signal by a reconstructed
Enhancement of the Curie temperature of ferromagnetic semiconductor (Ga,Mn)As (邀请综述)
Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by Diminishing the Diameter to 10 nm
Structure and magnetic properties of (In,Mn)As based core-shell nanowires grown on Si(111) by molecu
Anomalous Hall effect in epitaxial L10-Mn1.5Ga films with variable chemical ordering
Bias current dependence of the spin lifetime in insulating Al0.3Ga0.7As
Probing the thiol-gold planar interface by spin polarized tunneling
Recent progress in perpendicularly magnetized Mn-based binary alloy films (邀请综述)
Effect of Sb incorporation on structure and magnetic properties of quaternary ferromagnetic semicond
Structural characterization and magnetic properties of perpendicularly magnetized MnAl films grown b
Unveiling the Mechanism for the Split Hysteresis Loop in Epitaxial Co2Fe1-xMnxAl Full-Heusler Alloy
Robust Manipulationof Magnetism in Dilute MagneticSemiconductor (Ga,Mn)As by Organic Molecules
Orbital two-channel Kondo effect in epitaxial ferromagnetic L10-MnAl films
Quantitative determination of the Mn site distribution in ultrathin Ga0.80Mn0.20As layers with high
分子束外延制备的垂直易磁化MnAl薄膜结构和磁性