中文摘要：

对于用Cl2／Ar和Cl2／CH4／H2感应耦合等离子体（ICP）刻蚀InP／InGaAs多层膜进行了研究。发现用Cl2／Ar刻蚀InP／InGaAs时InP侧壁内切，在InP和InGaAs界面存在侧壁不连续问题。而用Cl2／CH4／H2刻蚀时，两层侧壁是平整连续的，且刻蚀区表面的粗糙度也比较小。分析了两种气体组合的刻蚀机理，对上述实验现象给出了解释。

英文摘要：

The study was taken between the etchings of InP/InGaAs heterostructure by Cl2/Ar and Cl2/CH4/H2 ICP, respectively. It is found that the Cl2/Ar etched sidewall of InP layer inclined toward inside, which lead the sidewall of InP layer and InGaAs discontinuous. In the Cl2/CH4/H2 etching, however, the sidewall is continual and all the etched areas are much smoother. The mechanism of the two combinations in etching process was also analyzed and a reasonable explanation is given in this paper.