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用电子散射对S核和Si核同位素的进一步研究
  • ISSN号：1674-1137
  • 期刊名称：《中国物理C：英文版》
  • 时间：0
  • 分类：O561.5[理学—原子与分子物理;理学—物理]
  • 作者机构：[1]南京大学物理系,南京210008, [2]兰州重离子加速器国家实验室原子核理论中心,兰州730000
  • 相关基金：国家自然科学基金（10535010）和国家重点基础研究发展规划项目（G2000077400）资助
作者： 范颖[1], 任中洲[1,2]
关键词： 相对论平均场, Eikonal近似, 形状因子, relativistic mean-field, Eikonal approximation, form factor
中文摘要：

用相对论平均场计算了^26,28,30,32,S和^22,24,26,28 Si的结合能，均方根半径，质子皮厚度，单粒子能级等.两套参数TM2和NL-SH的计算结果与实验值比较符合．用平均场与相对论Eikonal近似结合计算出^32 S和^28 Si的形状因子和微分截面的结果，与实验值也符合得较好．进一步研究了S和Si的同位素链的基本性质和电子散射，讨论了电子散射的电荷形状因子对电荷密度变化的敏感性．电荷形状因子在下一代电子-不稳定原子核对撞机上可以测量，这将能精确测量不稳定核的电荷半径和电荷密度分布，本文计算的结果可供未来实验参考。

英文摘要：

The binding energies and root-mean-square radii of ^26—32 S and^ 22—28 Si are calculated by the relativistic mean-field model with two sets of parameters TM2 and NL-SH. The calculated results are in agreement with the experimental data. The calculated form factors and differential cross sections of electron scattering on ^32 S and ^28 Si by the Eikonal approximation agree with the experimental data. Further calculations on electron scattering of S and Si isotopes are carried out, and the sensitivity of form factors on charge density is discussed. The form factor of electron scattering on unstable nuclei can be accurately measured in the future electron-nucleus coUider. The theoretical predictions would be valuable for future experiments.

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期刊信息
  • 《中国物理C：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会 中国科学院高能物理研究所 中国科学院近代物理研究所
  • 主编：王贻芳
  • 地址：北京市玉泉路19号（乙）
  • 邮编：100049
  • 邮箱：cpc@mail.ihep.ac.cn
  • 电话：010-88235947
  • 国际标准刊号：ISSN：1674-1137
  • 国内统一刊号：ISSN：11-5641/O4
  • 邮发代号:2-522
  • 获奖情况:
  • 2000年获中国科学院优秀期刊评比一等奖,中国期刊方阵“双百”期刊
  • 国内外数据库收录:
  • 俄罗斯文摘杂志,美国化学文摘（网络版）,荷兰文摘与引文数据库,美国剑桥科学文摘,美国科学引文索引（扩展库）,英国科学文摘数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,英国英国皇家化学学会文摘
  • 被引量:189