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Reverse leakage mechanism of Schottky barrier diode fabricated on homoepitaxial GaN
  • ISSN号：0038-1101
  • 期刊名称：Solid-State Electronics
  • 时间：2013.4.4
  • 页码：63-66
  • 相关项目：高Al组分AlGaN宽禁带半导体量子结构及其光探测器件的基础研究
作者： Lei, Yong|Lu, Hai|Cao, Dongsheng|Chen, Dunjun|Zhang, Rong|Zheng, Youdou|
同期刊论文项目
高Al组分AlGaN宽禁带半导体量子结构及其光探测器件的基础研究
期刊论文 79
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