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中文摘要：
利用瞬态热阻抗模型,设计实验研究MOV芯片通过直流电时散热能力的变化特征,结果表明,在通过直流电时,MOV芯片的内部晶体势垒高度并不是直接下降的,存在一个＂转折温度＂,这个温度是势垒高度改变的转折点,低于此温度,势垒高度上升,高于此温度,才是单调下降的。根据此原理,可用直流电对MOV芯片进行合适时间的＂预老化＂,以增强其初始散热能力。
英文摘要：
Using the transient thermal impedance model, the design experiment is used to study the variation characteristics of the cooling capacity of MOV chip under DC, The results show that the internal crystal barrier height of the MOV chip is not directly decreased under DC, and there is a ＂ turning temperature＂, which is the turning point of the change of the barrier height, below this temperature, the barrier height rises, above this temperature, it is monotonically decreasing. According to this principle, DC can be used on the MOV chip for the appropriate time ＂pre-aging＂ to enhance its initial cooling capacity.
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