利用超声雾化热分解技术(USP)、通过N-Al共掺的方法,在corning 7059衬底上生长出p型透明导电膜。该薄膜在可见光范围内的透过率可达到90%以上。X射线衍射的测试结果表明:p型透明导电膜具有c轴择优生长特性。通过霍耳测试得到p型ZnO薄膜的电学特性为:电阻率为4.21Ω·cm、迁移率是0.22cm^2/(V·s)、载流子浓度为6.68×10^18cm^-3。此材料初步应用到微晶硅电池中,其开路电压为0.47V。
ZnO based p type transparent conductive films were fabricated on corning 7059 by ultrasonic spray pyrolysis using N-Al co-doping method.These films have rather high average transmittance over 90% in the range of 400-800 nm.Results of X-ray diffusion(XRD)measurements indicate that the films exhibit preferred c-axis orientation.Electrical properties of the films were measured by HL 5500 system with Van der paw method.Resistance,hall mobility,and carrier concentration are 4.21 Ω·cm,0.22 cm^2/(V·s),and 6.68×10^18 cm^-3,respectively.Microcrystalline silicon solar cells were fabricated by using this kind of film as electrodes,and open circuit voltage amounts to 0.47 V.