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Effect of growth temperature of an AlN intermediate layer on the growth mode of AlN grown by MOCVD
  • ISSN号：0022-3727
  • 期刊名称：Journal of Physics D: Applied Physics
  • 时间：2013.2.2
  • 页码：-
  • 相关项目：非极性面ZnO/ZnCdO量子阱结构LED外延材料生长与器件制备研究
作者： Chen, C. Q.|Yan, W. Y.|Dai, J. N.|Li, S. L.|Tian, Y.|Hui, Xiong|Zhang, J. B.|Fang, Y. Y.|Wu, Z. H.|
同期刊论文项目
非极性面ZnO/ZnCdO量子阱结构LED外延材料生长与器件制备研究
期刊论文 13 会议论文 3
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