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中文摘要：
研究了用于喇曼放大的绝缘硅（SOI）脊形波导中自由载流子寿命与非线性光学损耗的关系.通过理论推导结合二维数值模拟的方法,提出了带有零反偏pin结构的SOI脊形波导中自由载流子寿命的解析表达式,该解析表达式与他人的实验结果相符.结果表明,比起不带pin结构的波导,带有零反偏pin结构的波导中的自由载流子寿命最多可以缩短80%.同时,研究了pin结构外加反偏电压时,自由载流子寿命进一步缩短的原因,并从强场下自由载流子速度饱和的角度出发,得到了自由载流子寿命的理论极限值.最后,模拟了不同自由载流子寿命情况下SOI脊形波导的喇曼净增益随着输入泵浦光功率密度的变化曲线,为硅基喇曼放大器的进一步研究指明了方向.
英文摘要：
The lifetime of free carriers in a silicon-on-insulator（SOI） rib waveguide,which is used for Raman amplification,is studied in connection with the nonlinear optical loss. An analytical expression for the free carrier lifetime in an SOI rib waveguide with a pin under a reverse bias voltage of zero,which is in accord with others＇s experimental results,is presented through theoretical deduction and two-dimensional numerical simulation. The results indicate a maximum reductior, of to 80 % of the free carrier lifetime inside the waveguide with a pin under a reverse bias voltage of zero compared to the one with no pin. The reason for the further reduction of the free carrier lifetime after reverse biasing the pin is also studied, and the theoretical limit of the free carrier lifetime is obtained through the view of velocity saturation under a strong field. Finally,the net Raman gain of the SOI rib waveguide versus the input pump optical intensity is simulated under different free carrier lifetimes,which directs the study of silicon-based Raman amplification.
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