研究了退火对磁场诱导下高定向热解石墨(HOPG)输运特性的影响,结果表明,退火后HOPG的R—T曲线明显变得光滑,且退火后电阻率增大了近50%,相应温度下的磁电阻效应均减小约40%。分析认为,这是由于HOPG内部存在层错与所含杂质缺陷引起的。磁场下电阻率随温度的变化表明,外加磁场对低温下的金属导电行为存在抑制作用,随着外加磁场的增加,低温下的金属导电行为受到抑制,在H=5.57×10^4A/m时,低温下的绝缘体一金属转变(I—M)被完全抑制,呈半导体性质。随着磁场的继续增加,在磁场高于H=9.24×10^5A/m时再次出现绝缘体-金属转变,即再入型金属导电行为,且退火对这一转变过程没有影响,表明这种绝缘体-金属转变是由外加磁场诱导产生的。
This paper studies the effect of annealing on the transport properties for the highly oriented pyrolytic graphite. Found that the annealing procedure could smooth the R-T curve of HOPG,doubling its resistivity,reducing its magnetoresistance by 40%. These could be attributed to the stacking-fault and impurities in the HOPG sample. Temperature dependence of the basal-plane resistivity reveals that the magnetic field restrains the metallic behavior ofHOPG at low temperatures. The metallic behavior disappears under H= 5.57 ×10^4 A/m and a reentrant metallic behavior appears under H = 9.24×10^5 A/m with no dependence on the sample annealing, indicates that the I-M transition is a magnetic field induced phenomenon.