Comparative study on the influence of AI component at GaAIAs layer for GaAs/AIGaAs photocathode
- ISSN号:1674-4926
- 期刊名称:《半导体学报:英文版》
- 时间:0
- 分类:TN[电子电信]
- 作者机构:[1]School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanj ing 210094, China, [2]School of Electronics and Electrical Engineering, Nanyang Institute of Technology, Nanyang 473004, China
- 相关基金:Project supported by the National Natural Science Foundation of China (Nos. 91433108, 6130 1023).