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Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control
  • ISSN号：1931-7573
  • 期刊名称：Nanoscale Research Letters
  • 时间：2011.12.12
  • 页码：1-6
  • 相关项目：无浸润层的氮化铟镓量子点生长机理和物性研究
作者： Niu, Lang|Hao, Zhibiao|Hu, Jiannan|Hu, Yibin|Wang, Lai|Luo, Yi|
同期刊论文项目
无浸润层的氮化铟镓量子点生长机理和物性研究
期刊论文 42 会议论文 2
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