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Temperature dependent growth of InGaN/GaN single quantum well
  • ISSN号：0749-6036
  • 期刊名称：Superlattices and Microstructures
  • 时间：2012.9.9
  • 页码：349-356
  • 相关项目：高Al组分AlGaN宽禁带半导体量子结构及其光探测器件的基础研究
作者： Zheng, Y. D.|Chen, P.|Yu, Z. G.|Liu, B.|Xie, Z. L.|Xiu, X. Q.|Wu, Z. L.|Xu, F.|Xu, Z.|
同期刊论文项目
高Al组分AlGaN宽禁带半导体量子结构及其光探测器件的基础研究
期刊论文 79
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