中文摘要：

采用射频磁控溅射法制备出了适用于HVPE-GaN厚膜生长的ZnO缓冲层,利用X射线衍射（XRD）和原子力显微镜（AFM）和光致发光（PL）等分析方法表征了ZnO缓冲层以及HVPE-GaN厚膜的晶体性能。实验结果表明,采用溅射功率为60W、氩气压强为2.0Pa、蓝宝石衬底为室温条件下的溅射工艺获得了（0002）单一取向、晶界清晰、晶粒尺寸均一的ZnO薄膜,以它为缓冲层获得的GaN厚膜XRD的（0002）衍射峰半高宽（FWHM）为265secarc,室温PL谱未见明显黄光发射带。

英文摘要：

RF-ZnO buffer layers for HVPE-GaN thick films were fabricated.Quality of ZnO buffer layers and thick GaN films were characterized by SEM,XRD,AFM and PL.The results showed that RF-ZnO film with（0002） single orientation,clear-grain-boundary and uniform-grain-size microstructure was obtained at the conditions as follows：sputtering power was 60W,Ar gas pressure was 2.0Pa and temperature of sapphire substrate was at room temperature.The FWHM value of（0002） reflection of thick HVPE-GaN film with RF-ZnO buffer layer was 265secarc and yellow luminescence was not observed clear in PL spectrum at room temperature.