采用热分解和电化学沉积相结合的方法,在p-Cu2O纳米棒上沉积n-Cu2O,制备了nCu2O/p-Cu2O纳米棒复合结构。通过X射线衍射分析(XRD)、扫描电镜分析(SEM)和Mott-Schottky(MS)测试研究了样品的结构、形貌以及导电类型,使用光电流密度测试考察了样品的光电化学性能,并根据电化学阻抗测试(EIS)进行了机理分析。结果表明:沉积n-Cu2O之后样品的载流子分离-转移能力大幅提升,因此n-Cu2O/p-Cu2O纳米棒复合结构表现出良好的光电化学性能。
N-Cu2O/p-Cu2 O nanorods composite was prepared by combining electrodeposition and thermal decomposition methods.X-ray diffraction(XRD),scanning electron microscopy(SEM)and MottSchottky(MS)plots were adopted to characterize its crystal structure,morphology and conduction type.The photoelectrochemical properties were measured through photocurrent density test and the mechanism was analyzed by electrochemical impedance spectroscopy(EIS).The results show that the photoelectrochemical property of p-Cu2 O can be improved significantly by electrodepositing n-Cu2 O due to the enhanced carries separation and transfer efficiency in n-Cu2O/p-Cu2 O nanocomposite materials.