中文摘要：

介绍了相变随机存储器（PCRAM）的研究现状，包括新型相变材料、热阻层材料和器件结构等。分析了GeSb和SiSb等相变材料具有组分简单、数据保持力好、优良的存储性能等特点，介绍了PCRAM这一新型半导体存储器的基本原理、特点以及国内外有关相变材料、过渡层材料和器件结构设计等方面的研究进展，最后提出了我国发展PCRAM的几点思考。

英文摘要：

The current situation of phase-change random access memory （PCRAM） is reviewed, including new phase change materials, buffer layer materials, and cell structures. With the advantages of simple composition, good data retention, and excellent memory performance, GeSb and SiSb are both new phase-change materials with good application potential in PCRAM chips. The developing strategy and destination of PCRAM in China and abroad are proposed on new materials and device structures. And some considerations on the development of PCRAM in China are proposed.