中文摘要：

为寻求PMN-32PT单晶电学性能不稳定的成因，利用准静态压电常数测试仪、数字电桥和EDS对[-001]切型PMN-32PT单晶的电学性能和成分分布进行了对比分析，并考察了裂纹对晶体电学性能的影响．结果表明，元素分布的不均匀是造成[-001]切型PMN-32PT单晶电学性能不均匀的重要原因，其中Ti对晶体的压电性能有正的贡献而Nb与之相反，Mg对介电常数有正的贡献；裂纹对晶体的电学性能影响显著，在裂纹处，PMN-32PT单晶的电学性能急剧下降．

英文摘要：

By using d33 meter, LCR meter and EDS, piezoelectric, dielectric properties and elements＇ distribution of [-001]cub PMN-32PT single crystals were analyzed find out the causes of the property inhomogeneity of PMN-32PT crystal. The influence of crack upon electric properties was analyzed as well. Results indicated that elements＇ distribution were important origins to the property inhomogeneity. Ti had positive contribution to the daa of PMN-32PT crystals but Nb negative. Mg had positive contribution to dielectric constant. Crack had great effect on electric properties of PMN-32PT crystals. Around cracks electric properties greatly decreased.