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Formation and annealing behaviors of qubit centers in 4H-SiC from first principles
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：2013.12.20
  • 页码：044309-
  • 相关项目：基于碳化硅晶体色心的自旋单量子态构筑和测量的理论模拟
作者： Hongxia Bu|Hongyu Zhang|Xiujie He|Aizhu Wang|
同期刊论文项目
基于碳化硅晶体色心的自旋单量子态构筑和测量的理论模拟
期刊论文 34
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