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Improvement on InGaN-based light emitting diodes using p-GaN layer grown at low temperature in full
  • ISSN号：1862-6300
  • 期刊名称：Physica Status Solidi A-Applications and Materials
  • 时间：2014.5
  • 页码：1175-1178
  • 相关项目：III族氮化物中极化诱导掺杂效应的物性研究及其应用验证
作者： Ma, Ziguang|Jia, Haiqiang|Zhou, Junming|Chen, Hong|
同期刊论文项目
III族氮化物中极化诱导掺杂效应的物性研究及其应用验证
期刊论文 21
同项目期刊论文
GaN Films Grown on Si (111) Substrates Using a Composite Buffer with Low Temperature AlN Interlayer
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Effect of InGa1−N “continuously graded” buffer layer on InGaN epilayer
Effect of Stair-Case Electron Blocking Layer on the Performance of Blue InGaN Based LEDs
A novel wavelength-adjusting method in InGaN-based light-emitting diodes
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Realization of high-luminousefficiency InGaN light-emitting diodes in the “green gap” range
Efficiency enhancement of InGaN/GaN multiple quantum wells with graphene layer
Temperature-dependent photoluminescence in light-emitting diodes
Improvement of light power and efficiency droop in GaN-based LEDs using graded InGaN hole reservoir
一种简单高效的制备硅纳米孔阵结构的方法
MBE growth of high absorption mid-IR type-II InAs/GaSb superlattices
Effect of InxGal-xN ＂continuously graded＂ buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition
Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching＊
Influence of Si doping on the structural and optical properties of InGaN epilayers
Fabrication of large-area nano-scale patterned sapphire substrate with laser interference lithography