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Mn掺杂GaN基稀磁半导体材料制备和特性研究
  • ISSN号：1003-353X
  • 期刊名称：《半导体技术》
  • 时间：0
  • 分类：TN304.055[电子电信—物理电子学]
  • 作者机构：[1]南京大学物理系江苏省光电功能材料重点实验室
  • 相关基金：国家“973”重点基础研究项目(2006CB6049);国家“863”高技术研究发展计划(2006AA03A103,2006AA03A118,2006AA03Z411);国家自然科学基金(60721063,60676057,60731160628);江苏省创新学者攀登项目(BK2008019)
作者： 谢自力[1], 张荣[1], 崔旭高[1], 陶志阔[1], 修向前[1], 刘斌[1], 李弋[1], 傅德颐[1], 张曾[1], 宋黎红[1], 崔影超[1], 韩平[1], 施毅[1], 郑有炓[1]
关键词： 金属有机物化学气相沉积, 稀磁半导体, 锰掺杂, X射线衍射
中文摘要：

利用金属有机物化学气相沉积法在蓝宝石衬底上生长了Mn掺杂GaN基稀磁半导体材料。原子力显微镜研究表明,少量的Mn在样品表面起到活性作用。X射线衍射和喇曼散射研究表明,当Mn的掺杂浓度很低(【2.7%)时并没有观察到第二相的出现,当Mn的掺杂浓度达到3.9%时观察到了第二相。采用光学测试得到了由于Mn杂质引入杂质能级和缺陷而产生一个很宽的发射和吸收谱。

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期刊信息
  • 《半导体技术》
  • 中国科技核心期刊
  • 主管单位:中国电子科技集团公司
  • 主办单位:中国电子科技集团公司第十三研究所
  • 主编：赵小玲
  • 地址：石家庄179信箱46分箱
  • 邮编：050051
  • 邮箱：informax@heinfo.net
  • 电话：0311-87091339
  • 国际标准刊号：ISSN：1003-353X
  • 国内统一刊号：ISSN：13-1109/TN
  • 邮发代号:18-65
  • 获奖情况:
  • 中文核心期刊,中国科技论文统计用刊
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  • 被引量:6070