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中文摘要：
采用溶胶一凝胶法在玻璃衬底上制备了不同掺Y浓度的ZnO透明导电薄膜。X射线衍射（CRD）表明，所制备的Y掺杂ZnO透明导电薄膜为六角纤锌矿结构的多晶薄膜，且具有C轴择优取向。随着Y掺杂浓度的升高，（002）峰向低角度方向移动。UV透射曲线表明，薄膜在可见光区（400-800nm）的平均透过率超过85％，具有明显的紫外吸收边，通过改变Y的掺入浓度，可以使吸收边向短波方向移动，从而使薄膜的禁带宽度可调。制备的Y掺杂ZnO薄膜电阻率最小值为3．68X102Ω·cm。
英文摘要：
The Y doped ZnO transparent conducting thin films were prepared on glass by sol-gel method. X-ray diffraction（XRD） showed that Y doped ZnO thin films had hexagonal wurtzite structure with a C-axis preferred orien- tation. The peak position of the （002） plane shifted to the low angle value with the increase of Y doping. From the transmittance spectrum, the average transmittance of Y doped ZnO film in the visible region （400-800nm） was be- yond 85%, and the optical absorption edge obviously shifted to the shorter wavelength with increasing Y doping. So the film band gap energy can be adiusted by changing the Y doping concentration. The minimum resistivity of Y doped ZnO film is 3. 68×102Ω·cm.
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