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High-indium-content InGaN quantum-well structure grown pseudomorphically on a strain-relaxed InGaN t
  • ISSN号：1071-1023
  • 期刊名称：Journal of Vacuum Science and Technology B
  • 时间：2012.6.6
  • 页码：030603-030603
  • 相关项目：高Al组分AlGaN宽禁带半导体量子结构及其光探测器件的基础研究
作者： Dabiran, Amir M.|Chen, Dunjun|Xue, Junjun|Liu, Bin|Lu, Hai|Zhang, Rong|Zheng, Youdou|Xu, Ke|Zhang, Jinping|
同期刊论文项目
高Al组分AlGaN宽禁带半导体量子结构及其光探测器件的基础研究
期刊论文 79
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