中文摘要：

高功率微波（HPM）通过使半导体器件特性退化和功能失效，从而干扰电子系统无法正常工作．针对金属氧化物半导体（MOS）器件的HPM效应，建立了高功率微波引起n型金属氧化物半导体场效应晶体管（nMOSFET）特性退化的物理过程与模型．器件仿真结果中nMOSFET的输出特性曲线显示栅极注入HPM引起器件特性退化，包括阈值电压正向漂移、饱和电流减小、跨导减小等；结合物理模型分析可知，HPM引起的高频脉冲电压使器件进入深耗尽状态，热载流子数目增多，热载流子效应导致器件特性退化．MOS器件的HPM注入实验结果显示，器件特性曲线、器件模型参数变化趋势与仿真结果一致，验证了HPM引起nMOSFET特性退化的物理过程与模型．

英文摘要：

High power microwave （HPM） can disrupt the normal work of electronic systems through the effect of HPM on semiconductor devices. In this paper, the physical process and the physical model of the characteristic degradation of n-metal-oxide-semiconductor field-effect transistor （nMOSFET） induced by HPM are introduced. In device simulation results, the output characteristic curve of nMOSFET shows that HPM can induce the degradation of the characteristics of device, including the forward drift of threshold voltage, and the reduction of saturation current and transconductance. Based on the process and the model introduced in this paper, the voltage pulse generated by HPM makes nMOSFET be in depletion status and hot carrier increase; then the effect of hot carrier results in the characteristic degradation of device. The experimental result of MOS injected HPM shows the changes of output characteristics and model parameters are consistent with the device simulation results, proving that the physical process and the physical model introduced in the paper are correct.