中文摘要：

利用蒙特卡罗方法计算氦离子和氩离子在各种参数下（离子能量、入射角度）入射硅材料表面的溅射产额.计算了硅材料表面的溅射产额对离子数目、离子能量、入射角度与He离子和Ar离子的数量依赖关系,并对模拟结果进行分析.当入射离子数量为2000个,入射能量为3keV,入射角度为84°时,He离子产生的溅射产额最大值是1.30Atoms/ion;当入射角度为78°时,Ar离子产生的溅射产额最大值是8.91Atoms/ion.

英文摘要：

The sputtering yield of the silicon thin film by He ions and Ar ions under various parameters （ion energy,angle of incidences） is calculated by Monte Carlo method.The dependences of the sputtering yield on incident ion energy,incident angle and the number of ion are predicted.The simulation results are analyzed.When the number of ion is 2 000,ion energy is 3 keV,angle of incidence is 84°,the He ions will appear to the biggest sputtering yield that is 1.30 Atoms/ion;when angle of incidence is 78°,the Ar ions will appear to the biggest sputtering yield that is 8.91 Atoms/ion.