中文摘要：

采用三元体系半无限扩散偶的高斯方法，求解了SiC／Ti6A14V复合材料界面反应层中相关元素的扩散系数，计算的浓度分布和实测值一致。碳原子通过反应层的扩散服从间隙扩散机制，硅原子的扩散为空位扩散机制。由于碳扩散的振动能最低并且跃迁距离最短，而供硅扩散的空位不足，碳和硅在反应产物TiC，中具有最小的内禀扩散系数，分别为8．9403×10^-16和4．7747×10^-16·m^2·s^-1。研究表明，在SiC／Ti6A14V复合材料界面反应的过程中，反应元素通过反应层TiCx的扩散是一个主要的控制步骤。

英文摘要：

The diffusion coefficients of the relative reactive elements in interracial reaction layer of SiC/Ti6A14V composite were solved by use of Guass method in a semi-infinite diffusion couple for ternary systems, and the concentration distribution of diffusion elements calculated was well fitted to the measurements. C atoms diffuse through the reaction layer by interstitial diffusion mechanism, while Si atoms diffuse through the reaction layer by vacancy diffusion mechanism. C and Si atoms have the minimum intrinsic diffusion coefficients in TiCx layer, which are 8.9403× 10^16 and 4.7747× 10^16 m^2·s^1, respectively, because of the lowest molecular vibrancy energy and transition distance for C atoms and the insufficient vacancy for Si atoms. The reactive element diffusing through the TiCx layer is a dominant determining step in interfacial reaction progress of SiC/Ti6A14V composite.