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Simulation study on 4H-SiC power devices with high-k dielectric FP terminations
  • ISSN号：0925-9635
  • 期刊名称：Diamond and Related Materials
  • 时间：2012.2.2
  • 页码：42-47
  • 相关项目：新型高功率4H-SiC JBS二极管的研究
作者： Song, Qing-Wen|Zhang, Yu-Ming|Zhang, Yi-Men|Tang, Xiao-Yan|
同期刊论文项目
新型高功率4H-SiC JBS二极管的研究
期刊论文 14 会议论文 1 专利 3
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