中文摘要：

为提高808nm、垂直腔面发射半导体激光器（VCSEL）的输出功率与电光转换效率，对其湿法氧化工艺进行了实验研究。采用扫描电镜（SEM）的微区分析功能，对样品氧化层按不同的氧化深度进行微区分析。微区分析结果表明：适当降低氧化温度，延长氧化时间，可减小氧化限制孔径的控制误差，提高氧化工艺的准确性；氧化后对样品进行高温加热处理，可减少氧化层中的As含量，改善氧化层的质量，提高氧化工艺的热稳定性。

英文摘要：

Wet oxidation experiments of the samples were carried out in order to improve the power and the conversion efficiency of 808 nm vertical-cavity surface-emitting laser （VCSEL）. Micro-probe analyses were done at the different oxidation depths of oxidation layer by scaning electron microscope （SEM）. The analyzed results show that the oxide-aperture can become more precise by lowering oxidation temperature and proloning oxidation time; the As content in oxidation layer decreases, the oxidation layer quality and thermal stability can be improved by heating the samples after oxidating.