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Lasing characteristics of curved semiconductor nanowires
  • 分类：TN248.4[电子电信—物理电子学] TB383[一般工业技术—材料科学与工程]
  • 作者机构：[1]State Key Laboratory of Modern Optical Instrumentation, Department of Optical Engineering, Zhcjiang University, Hangzhou 310027, China, [2]State Kcy Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China
  • 相关基金：Acknowledgements This work was supported by the National Natural Science Foundation of China （Grant No. 61177062）, the Program for Zhejiang Leading Team of S＆T Innovation, the Fundamental Research Funds for the Central Universities.
作者： Weisong YANG[1], Yipei WANG[1], Yaoguang MA[2], Chao MENG[1], Xiaoqin WU[1], Qing YANG[1]
关键词： 半导体纳米线, 弯曲角度, 激射特性, 激光光谱, 弯曲损耗, 异常现象, 激光器, 谐振腔, semiconductor nanowire, lasing characteris-tics, red-shift, bending loss, dominant peaks
中文摘要：

E-mail： qingyang@zju.edu.cn

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