中文摘要：

采用磁过滤阴极脉冲真空弧沉积（pulsed filtered cathodic vacuum arc deposition,PFCVAD）系统,以Si（100）单晶片为衬底,在衬底温度300℃、氧气压力4.0×10-2Pa的条件下制备出了c轴择优取向的ZnO薄膜。通过原子力显微镜（AFM）和X射线衍射（XRD）技术对ZnO薄膜的表征,研究了靶负压对ZnO薄膜结构和应变的影响。研究结果表明,不同靶负压条件下ZnO薄膜的晶粒大小分布在16.7~39.0 nm之间,靶负压对薄膜表面结构影响较小 不同靶负压条件下ZnO薄膜都呈张应力,且张应力随靶负压的增大而增大。

英文摘要：

ZnO thin films were prepared by pulsed filtered cathodic vacuum arc deposition system under various neg- ative substrate bias on Si（100） at 300 ℃ and 4.0 ×10 -2 Pa of oxygen pressure. The surface morphology,structural and strain properties of the ZnO thin films were investigated using AFM and X - ray diffraction. It is found that the surface morphology is not significantly influenced by the negative substrate bias. The films show c - axis oriented （002） hexagonal wurtzite crystal structure. It has been found that the grain size of ZnO thin films varies from 16. 7nm to 39.0nm under different negative substrate bias and their interior strain are strongly correlated to the negative substrate bias. The prepared films exhibited only tensile stress and the tensile stress increased with the increment of the negative substrate bias.