中文摘要：

采用双靶共溅射Cu-Sb合金预制层后硫化法制备铜锑硫（Cu Sb S2）薄膜,研究溅射功率对合金成分的影响,并采用X线能量色散谱（EDS）、扫描电镜（SEM）、X线衍射（XRD）和紫外-可见-近红外分光光度计（UV-VIS-NIR）等对硫化后薄膜进行表征,同时制备Cu Sb S2太阳能电池器件并对其输出特性进行表征和分析。研究结果表明：三元Cu Sb S2相由预制层中金属被硫化生成的二元硫化物Cu S和Sb2S3相互反应形成。在400℃下硫化退火可制得结晶良好、表面致密的Cu Sb S2薄膜,其带隙宽度为1.46 e V,并在可见光区具有大于5×104 cm-1的光吸收系数。制作的glass/Mo/Cu Sb S2/Cd S/i-Zn O/Al-doped Zn O/Ag薄膜太阳能电池器件在太阳总辐照度为100 m W/cm2下测试,获得的开路电压和短路电流密度分别达150 m V和1.29 m A/cm2。

英文摘要：

CuSbS2 thin films were prepared by sulfurizing Cu-Sb metallic precursors which were deposited by co-sputtering Cu and Sb targets. The effects of sputtering powers on alloying constituent were investigated. The sulfurized films were characterized by EDS, SEM, XRD and UV-VIS-NIR spectrophotometer. In addition, CuSbS2 based solar cell device was fabricated and its output characteristics were performed and analyzed. The results indicate that ternary CuSbS2 phase is formed by the reaction between binary metallic sulfides CuS and Sb2S3 by the sulfurization of metallic precursors. Compact CuSbS2 thin films with good crystallinity can be obtained at the sulfurized temperature of 400 ℃. The energy gap of CuSbS2 thin films is 1.46 e V and its optical absorption coefficient to visible light is over 5×104 cm-1. CuSbS2 thin films solar cell devices were fabricated as glass/Mo/CuSbS2/CdS/i-ZnO/Al-doped ZnO/Ag. An open circuit voltage of 150 m V and short circuit current density of 1.29 m A/cm2 were observed under the illumination intensity of 100 m W/cm2.