位置：成果数据库 > 期刊 > 期刊详情页
Synchrotron radiation study of VO2 crystal film epitaxial growth on sapphire substrate with intrinsi
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2013.1.7
  • 页码：11604-11609
  • 相关项目：二氧化钒金属绝缘体相变温度的调控及其同步辐射研究
作者： Si, C.|Pan, G. Q.|Zou, C. W.|Wu, Z. Y.|
同期刊论文项目
二氧化钒金属绝缘体相变温度的调控及其同步辐射研究
期刊论文 20
同项目期刊论文
Metal–insulator transition in V1xWxO2: structural and electronic origin
Spectroscopic analysis of phase constitution of high quality VO2 thin film prepared by facile sol-ge
Metal-insulator transition in V1-xWxO2: structural and electronic origin
Oxygen pressure induced structure, morphology and phase-transition for VO2/c-sapphire films by PLD
Control of the Metal？Insulator Transition in VO2 Epitaxial Film by Modifying Carrier Density
Evolution of structure and electrical properties with annealing time in solution-based VO2 thin film
Decoupling the Lattice Distortion and Charge Doping Effects on the Phase Transition Behavior of VO2
The optimization of a self-focusing e-beam evaporator for carbon evaporation and the application for
Growth and phase transition characteristics of pure M-phase VO2 epitaxial film prepared by oxide mol
Oxygen pressure dependent VO2 crystal film preparation and the interfacial epitaxial growth study
Facile preparation of vanadium oxide thin films on sapphire(0001) by sol-gel method
Depressed transition temperature of WxV1-xO2: mechanistic insights from the X-ray absorption fine st
A novel route to realize controllable phases in an aluminum (Al3+)-doped VO2 system and the metal-in
Strain Dynamics of Ultrathin VO2 Film Grown on TiO2 (001) and the Associated Phase Transition Modula